همهاخبارمکان‌یابراهنمای خریدتصاویرویدیومقالات علمی
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ieeexplore.ieee.org/abstract/document/1362975/PDF

Analytical modeling of MOSFETs channel noise and noise parameters

S Asgaran, MJ Deen, CH Chen - IEEE Transactions on Electron …, 2004 - ieeexplore.ieee.org
۱۳۰ ارجاع2004

Simple analytical expressions for MOSFETs noise parameters are developed and experimentally verified. The expressions are based on analytical modeling of MOSFETs channel noise…

onlinelibrary.wiley.com/doi/abs/10.1002/smll.202410848

Advanced Functional NiCo2S4@CoMo2S4 Heterojunction Couple as Electrode for Hydrogen Production via Energy‐Saving Urea Oxidation

…, Z Moazzami Goudarzi, M Gniadek, S Asgaran… - Small, 2025 - Wiley Online Library
۲۴ ارجاع2025

The urea oxidation reaction (UOR) is characterized by a lower overpotential compared to the oxygen evolution reaction (OER) during electrolysis, which facilitates the hydrogen …

ieeexplore.ieee.org/abstract/document/4126784/

Design of the input matching network of RF CMOS LNAs for low-power operation

S Asgaran, MJ Deen, CH Chen - IEEE Transactions on Circuits …, 2007 - ieeexplore.ieee.org
۱۰۱ ارجاع2007

Optimum design of input matching network of CMOS low-noise amplifiers (LNAs) for low-power applications is discussed in this paper. This is done through an investigation of the effect …

pubs.acs.org/doi/abs/10.1021/acsami.5c06548

Compressible Co3O4@MoS2 Aerogel as an Advanced Functional Electrode for Asymmetric Supercapacitors

S Asgaran, Z Moazzami Goudarzi… - … Applied Materials & …, 2025 - ACS Publications
۵ ارجاع2025

For the development of next-generation portable energy storage devices, compression-tolerant electrodes are essential, but most of the previous reports have focused only on carbon-…

ieeexplore.ieee.org/abstract/document/1677840/PDF

High-frequency noise of modern MOSFETs: Compact modeling and measurement issues

MJ Deen, CH Chen, S Asgaran… - … on Electron Devices, 2006 - ieeexplore.ieee.org
۱۳۰ ارجاع2006

Compact modeling of the most important high-frequency (HF) noise sources of the MOSFET is presented in this paper, along with challenges in noise measurement and deembedding …

onlinelibrary.wiley.com/doi/abs/10.1002/smll.202508200

Interfacial Electronic Synergism in Cobalt‐Doped MoS2‐COF Heterostructures for Energy‐Efficient Hydrazine‐Assisted Hydrogen Production

…, H Kang, M Goddati, IM Khoris, N Nwaji, S Asgaran… - Small, 2025 - Wiley Online Library
۶ ارجاع2025

Hydrazine oxidation (HzOR) assisted hydrogen production offers a promising alternative to energy‐intensive and sluggish oxygen evolution reaction (OER), improving its efficiency. …

www.sciencedirect.com/science/article/pii/S0360319925058343

Ni (CN) 2@ NiS anchored on graphitic carbon nitride as an advanced functional electrode for self-powered hydrazine-assisted hydrogen generation

BF Banti, H Kang, S Asgaran, BB Gicha… - International Journal of …, 2026 - Elsevier
۳ ارجاع2026

The anodic substitution of a sluggish oxygen evolution reaction with a more energy-saving hydrazine oxidation reaction has the potential to greatly reduce energy consumption for …

chemistry-europe.onlinelibrary.wiley.com/doi/abs/10.1002/cssc.202402533

Defect Engineered Ru‐CoMOF@MoS2 Heterointerface Facilitate Water Oxidation Process

…, J Gwak, BB Gicha, H Kang, S Asgaran… - …, 2025 - Wiley Online Library
۱۰ ارجاع2025

Catalyst design plays a critical role in ensuring sustainable and effective energy conversion. Electrocatalytic materials need to be able to control active sites and introduce defects in …

www.sciencedirect.com/science/article/pii/S0360319924036097PDF

Disentangling the catalytic origin in defect engineered 2D NiCoMoS@ Ni (CN) 2 core-shell heterostructure for energy-saving hydrazine-assisted water oxidation

…, B Fikadu, M Osial, ZM Goudarzi, S Asgaran… - International Journal of …, 2024 - Elsevier
۱۰ ارجاع2024

The major hindrance to efficient electrocatalytic hydrogen generation from water electrolysis is the sluggish kinetics with corresponding large overvoltage of oxygen evolution reaction. …

ieeexplore.ieee.org/abstract/document/1613891/PDF

A 4-mW monolithic CMOS LNA at 5.7 GHz with the gate resistance used for input matching

S Asgaran, MJ Deen, CH Chen - IEEE Microwave and Wireless …, 2006 - ieeexplore.ieee.org
۷۲ ارجاع2006

Design and measured results of a fully integrated 5.7-GHz CMOS low-noise amplifier (LNA) is presented. To design this LNA, the parasitic input resistance of a metal-oxide-…

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